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This book contains reviews of recent experimental and theoretical
results related to nanomaterials. It focuses on novel functional
materials and nanostructures in combination with silicon on
insulator (SOI) devices, as well as on the physics of new devices
and sensors, nanostructured materials and nano scaled device
characterization. Special attention is paid to fabrication and
properties of modern low-power, high-performance, miniaturized,
portable sensors in a wide range of applications such as
telecommunications, radiation control, biomedical instrumentation
and chemical analysis. In this book, new approaches exploiting
nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires,
graphene or carbon nanotubes on dielectric) to pave a way between
"More Moore" and "More than Moore" are considered, in order to
create different kinds of sensors and devices which will consume
less electrical power, be more portable and totally compatible with
modern microelectronics products.
This book contains reviews of recent experimental and theoretical
results related to nanomaterials. It focuses on novel functional
materials and nanostructures in combination with silicon on
insulator (SOI) devices, as well as on the physics of new devices
and sensors, nanostructured materials and nano scaled device
characterization. Special attention is paid to fabrication and
properties of modern low-power, high-performance, miniaturized,
portable sensors in a wide range of applications such as
telecommunications, radiation control, biomedical instrumentation
and chemical analysis. In this book, new approaches exploiting
nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires,
graphene or carbon nanotubes on dielectric) to pave a way between
"More Moore" and "More than Moore" are considered, in order to
create different kinds of sensors and devices which will consume
less electrical power, be more portable and totally compatible with
modern microelectronics products.
"Semiconductor-On-Insulator Materials for NanoElectronics
Applications" is devoted to the fast evolving field of modern
nanoelectronics, and more particularly to the physics and
technology of nanoelectronic devices built on
semiconductor-on-insulator (SemOI) systems. The book contains the
achievements in this field from leading companies and universities
in Europe, USA, Brazil and Russia. It is articulated around four
main topics: 1. New semiconductor-on-insulator materials; 2.
Physics of modern SemOI devices; 3. Advanced characterization of
SemOI devices; 4. Sensors and MEMS on SOI.
"Semiconductor-On-Insulator Materials for NanoElectonics
Applications" is useful not only to specialists in nano- and
microelectronics but also to students and to the wider audience of
readers who are interested in new directions in modern electronics
and optoelectronics.
Device and Circuit Cryogenic Operation for Low Temperature
Electronics is a first in reviewing the performance and physical
mechanisms of advanced devices and circuits at cryogenic
temperatures that can be used for many applications. The first two
chapters cover bulk silicon and SOI MOSFETs. The electronic
transport in the inversion layer, the influence of impurity
freeze-out, the special electrical properties of SOI structures,
the device reliability and the interest of a low temperature
operation for the ultimate integration of silicon down to nanometer
dimensions are described. The next two chapters deal with
Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as
well as III-V High Electron Mobility Transistors (HEMT). The basic
physics of the SiGe HBT and its unique cryogenic capabilities, the
optimization of such bipolar devices, and the performance of SiGe
HBT BiCMOS technology at liquid nitrogen temperature are examined.
The physical effects in III-V semiconductors at low temperature,
the HEMT and HBT static, high frequency and noise properties, and
the comparison of various cooled III-V devices are also addressed.
The next chapter treats quantum effect devices made of silicon
materials. The major quantum effects at low temperature, quantum
wires, quantum dots as well as single electron devices and
applications are investigated. The last chapter overviews the
performances of cryogenic circuits and their applications. The low
temperature properties and performance of inverters, multipliers,
adders, operational amplifiers, memories, microprocessors, imaging
devices, circuits and systems, sensors and read-out circuits are
analyzed. Device and Circuit Cryogenic Operation for Low
Temperature Electronics is useful for researchers, engineers, Ph.D.
and M.S. students working in the field of advanced electron devices
and circuits, new semiconductor materials, and low temperature
electronics and physics.
A review of the electrical properties, performance and physical
mechanisms of the main silicon-on-insulator (SOI) materials and
devices. Particular attention is paid to the reliability of SOI
structures operating in harsh conditions. The first part of the
book deals with material technology and describes the SIMOX and
ELTRAN technologies, the smart-cut technique, SiCOI structures and
MBE growth. The second part covers reliability of devices operating
under extreme conditions, with an examination of low and high
temperature operation of deep submicron MOSFETs and novel SOI
technologies and circuits, SOI in harsh environments and the
properties of the buried oxide. The third part deals with the
characterization of advanced SOI materials and devices, covering
laser-recrystallized SOI layers, ultrashort SOI MOSFETs and
nanostructures, gated diodes and SOI devices produced by a variety
of techniques. The last part reviews future prospects for SOI
structures, analyzing wafer bonding techniques, applications of
oxidized porous silicon, semi-insulating silicon materials,
self-organization of silicon dots and wires on SOI and some new
physical phenomena.
Device and Circuit Cryogenic Operation for Low Temperature
Electronics is a first in reviewing the performance and physical
mechanisms of advanced devices and circuits at cryogenic
temperatures that can be used for many applications. The first two
chapters cover bulk silicon and SOI MOSFETs. The electronic
transport in the inversion layer, the influence of impurity
freeze-out, the special electrical properties of SOI structures,
the device reliability and the interest of a low temperature
operation for the ultimate integration of silicon down to nanometer
dimensions are described. The next two chapters deal with
Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as
well as III-V High Electron Mobility Transistors (HEMT). The basic
physics of the SiGe HBT and its unique cryogenic capabilities, the
optimization of such bipolar devices, and the performance of SiGe
HBT BiCMOS technology at liquid nitrogen temperature are examined.
The physical effects in III-V semiconductors at low temperature,
the HEMT and HBT static, high frequency and noise properties, and
the comparison of various cooled III-V devices are also addressed.
The next chapter treats quantum effect devices made of silicon
materials. The major quantum effects at low temperature, quantum
wires, quantum dots as well as single electron devices and
applications are investigated. The last chapter overviews the
performances of cryogenic circuits and their applications. The low
temperature properties and performance of inverters, multipliers,
adders, operational amplifiers, memories, microprocessors, imaging
devices, circuits and systems, sensors and read-out circuits are
analyzed. Device and Circuit Cryogenic Operation for Low
Temperature Electronics is useful for researchers, engineers, Ph.D.
and M.S. students working in the field of advanced electron devices
and circuits, new semiconductor materials, and low temperature
electronics and physics.
This book provides readers with a comprehensive, state-of-the-art
reference for miniaturized More-than-Moore systems with a broad
range of functionalities that can be added to 3D microsystems,
including flexible electronics, metasurfaces and power sources. The
book also includes examples of applications for brain-computer
interfaces and event-driven imaging systems. Provides a
comprehensive, state-of-the-art reference for miniaturized
More-than-Moore systems; Covers functionalities to add to 3D
microsystems, including flexible electronics, metasurfaces and
power sources; Includes current applications, such as
brain-computer interfaces, event - driven imaging and edge
computing.
"Semiconductor-On-Insulator Materials for NanoElectronics
Applications is devoted to the fast evolving field of modern
nanoelectronics, and more particularly to the physics and
technology of nanoelectronic devices built on
semiconductor-on-insulator (SemOI) systems. The book contains the
achievements in this field from leading companies and universities
in Europe, USA, Brazil and Russia. It is articulated around four
main topics: 1. New semiconductor-on-insulator materials; 2.
Physics of modern SemOI devices; 3. Advanced characterization of
SemOI devices; 4. Sensors and MEMS on SOI.
"Semiconductor-On-Insulator Materials for NanoElectonics
Applications is useful not only to specialists in nano- and
microelectronics but also to students and to the wider audience of
readers who are interested in new directions in modern electronics
and optoelectronics.
A review of the electrical properties, performance and physical
mechanisms of the main silicon-on-insulator (SOI) materials and
devices. Particular attention is paid to the reliability of SOI
structures operating in harsh conditions. The first part of the
book deals with material technology and describes the SIMOX and
ELTRAN technologies, the smart-cut technique, SiCOI structures and
MBE growth. The second part covers reliability of devices operating
under extreme conditions, with an examination of low and high
temperature operation of deep submicron MOSFETs and novel SOI
technologies and circuits, SOI in harsh environments and the
properties of the buried oxide. The third part deals with the
characterization of advanced SOI materials and devices, covering
laser-recrystallized SOI layers, ultrashort SOI MOSFETs and
nanostructures, gated diodes and SOI devices produced by a variety
of techniques. The last part reviews future prospects for SOI
structures, analyzing wafer bonding techniques, applications of
oxidized porous silicon, semi-insulating silicon materials,
self-organization of silicon dots and wires on SOI and some new
physical phenomena.
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